SSM6K405TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6K405TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K405TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5V drive
• Low ON-resistance:
R_on = 307 mΩ (max) (@V_GS = 1.5V)
R_on = 214 mΩ (max) (@V_GS = 1.8V)
R_on = 164 mΩ (max) (@V_GS = 2.5V)
R_on = 126 mΩ (max) (@V_GS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DSS
20
V
Gate–source voltage
V_GSS
± 10
V
Drain current
DC
I_D
Pulse
I_DP
2.0
A
4.0
Drain power dissipation
P_D (Note 1)
500
mW
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
1
6
2
5
3
4
UF6
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0 V
20
⎯
⎯
V
V _{(BR) DSX} I_D = 1 mA, V_GS = – 10 V
12
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0 V
⎯
⎯
1
μA
I_GSS
V_GS = ± 10 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = 3 V, I_D = 1 mA
0.35 ⎯
1.0
V
⏐Y_fs⏐
V_DS = 3 V, I_D = 1.0 A
(Note2) 2.6
5.2
⎯
S
I_D = 1.0 A, V_GS = 4.0 V
(Note2) ⎯
90
126
R_{DS (ON)}
I_D = 1.0 A, V_GS = 2.5 V
I_D = 0.5 A, V_GS = 1.8 V
(Note2) ⎯
(Note2) ⎯
115 164
mΩ
150 214
I_D = 0.3 A, V_GS = 1.5 V
(Note2) ⎯
185 307
C_iss
⎯
195
⎯
C_oss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
⎯
35
⎯
pF
C_rss
⎯
29
⎯
Q_g
⎯
3.4
⎯
Q_gs
V_DS = 10 V, I_D= 2.0 A, V_GS = 4 V
⎯
2.3
⎯
nC
Q_gd
⎯
1.1
⎯
t_on
V_DD = 10 V, I_D = 0.5 A,
t_off
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
8.0
⎯
ns
⎯
9.0
⎯
V_DSF
I_D = − 2.0 A, V_GS = 0 V
(Note2) ⎯ – 0.85 – 1.2 V
Start of commercial production
2007-10
1
2014-03-01