SSM6K202FE_14 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

|Y_fs| – I_D
10
3
1
0.3
0.1
0.01
Common Source
VDS = 3 V
Ta = 25°C
0.1
1
10
Drain current I_D (A)
1000
500
300
C – V_DS
Ciss
100
50
Common Source
30
Ta = 25°C
f = 1 MHz
V_GS = 0 V
Coss
Crss
10
0.1
1
10
100
Drain–source voltage V_DS (V)
1000
P_D – T_a
Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm _PC_Du P_–ad_T: 6_a45 mm²)
800
600
400
200
0
–40 –20 0 20 40 60 80 100 ₁₂₀ 140 160
Ambient temperature Ta (°C)
SSM6K202FE
I_DR – V_DS
10
Common Source
D
V_GS = 0 V
Ta = 25°C
1
I_DR
G
S
0.1
Ta =100 °C
0.01
25 °C
0.001
0
–0.2
−25 °C
–0.4
–0.6
–0.8
–1.0
Drain–source voltage V_DS (V)
1000
toff
100
tf
t – I_D
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25°C
RG = 4.7 Ω
10
ton
tr
1
0.01
0.1
1
10
Drain current I_D (A)
4
2014-03-01