SSM6K202FE_14 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

I_D – V_DS
5
10 V 4.0 V 2.5 V
4
3
1.8 V
2
VGS = 1.5 V
1
Common Source
Ta = 25°C
0
0
0.2
0.4
0.6
0.8
1
Drain–source voltage V_DS (V)
SSM6K202FE
I_D – V_GS
10
Common Source
V_DS = 3 V
1
0.1
0.01
0.001
Ta = 100 °C
25 °C
− 25 °C
0.0001
0
1.0
2.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
200
ID = 0.5 A
Common Source
150
Ta = 25°C
100
Ta = 100 °C
50
25 °C
− 25 °C
0
0
2
4
6
8
10
Gate–source voltage V_GS (V)
R_{DS (ON)} – Ta
300
Common Source
250
200
150
0.5 A / 1.8 V
1.0 A / 2.5 V
100
50
ID = 1.5 A / VGS = 4.0 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
R_{DS (ON)} – I_D
200
Common Source
Ta = 25°C
150
100
1.8 V
2.5 V
50
VGS = 4.0 V
0
0
1
2
3
4
5
Drain current I_D (A)
V_th – Ta
1.0
0.5
Common source
VDS = 3 V
ID = 1 mA
0
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2014-03-01