SSM6J401TU Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

10
Common Source
VDS = - 5 V
Ta = 25°C
3
|Y_fs| – I_D
1
0.3
0.1
-0.01
-0.1
-1
-10
Drain current I_D (A)
10000
C – V_DS
3000
1000
Ciss
300
100
Common Source
30 ^{Ta = 25°C}
f = 1 MHz
VGS = 0 V
10
-0.1
-1
Coss
Crss
-10
-100
Drain–source voltage V_DS (V)
SSM6J401TU
10
Common Source
VGS = 0 V
D
1
G
I_DR
I_DR – V_DS
S
0.1
Ta =100 °C
0.01
25 °C
0.001
0
−25 °C
0.5
1.0
1.5
Drain–source voltage V_DS (V)
1000
toff
tf
100
ton
10
tr
t – I_D
Common Source
VDD = - 15 V
VGS = 0 ∼ - 4.0 V
Ta = 25 °C
RG = 10 Ω
1
-0.01
-0.1
-1
-10
Drain current I_D (A)
Dynamic Input Characteristic
-10
Common Source
ID = - 2.5A
-8 _{Ta = 25°C}
-6
VDS= -15V
VDS= - 24V
-4
-2
0
0
4
8
12
16
20
Total Gate Charge Qg (nC)
4
2014-03-01