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SSM6J401TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type | |||
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SSM6J401TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J401TU
â DC/DC Converter Application
â High-Speed Switching Applications
⢠4.0V drive
⢠Low ON-resistance : RDS(ON) = 145m⦠(max) (@VGS = â4 V)
: RDS(ON) = 73m⦠(max) (@VGS = â10 V)
2.1±0.1
1.7±0.1
unit: mm
1
6
Absolute Maximum Ratings (Ta = 25ËC)
Characteristic
Symbol
Rating
Unit
2
5
3
4
Drainâsource voltage
VDSS
â30
V
Gateâsource voltage
VGSS
±20
V
Drain current
DC
ID
Pulse
IDP
â2.5
A
â5.0
Drain power dissipation
PD (Note1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
â55 to 150
°C
Note 1: Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
UF6
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
JEDEC
JEITA
TOSHIBA
â
â
2-2T1D
Weight: 7.0 mg (typ.)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
|Yfs|
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
ID = â1 mA, VGS = 0 V
ID = â1 mA, VGS = 20 V
VDS = â30 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
VDS = â5 V, ID = â1 mA
VDS = â5 V, ID = â2.0 A
ID = â2.0 A, VGS = â10 V
ID = â1.5 A, VGS = â4 V
(Note 2)
(Note 2)
(Note 2)
VDS = â15 V, VGS = 0 V, f = 1 MHz
VDS = â15V, ID = â2.5 A
VGS = â10 V
VDD = â15 V, ID = â2.0 A
VGS = 0 to â4 V, RG = 10 Ω
ID = 2.5 A, VGS = 0 V
(Note 2)
â30
â15
â¯
â¯
â1.2
3.1
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
Typ.
â¯
â¯
â¯
â¯
â¯
6.2
53
85
730
110
90
16
12.8
3.2
33
27
0.8
Max
â¯
â¯
â10
±1
â2.6
â¯
73
145
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
Start of commercial production
2007-07
1
2014-03-01
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