SSM6J07FU Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon P Channel MOS Type

1000
500
C – V_DS
100
Ciss
50
Coss
Common Source
10 VGS = 0 V
f = 1 MHz
Ta = 25°C
5
-0.1
-0.5 -1
Crss
-5 -10
-50 -100
Drain-Source voltage VDS (V)
Safe Operating Area
-10
ID max (pulse) *
-1
ID max
(continuous)
10 ms
1 ms
100 ms
-0.1
DC operation
Ta = 25°C
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´1.6 t
Cu pad: 0.32 mm2 ´ 6) Figure 1
-0.01
* Single non-repetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
-0.001
-0.1
-1
VDSS max
-10
Drain-Source voltage VDS (V)
-100
SSM6J07FU
500
300
toff
100
tf
t – I_D
Common Source
VDD = -15 V
VGS = 0~-4 V
Rg = 10 W
Ta = 25°C
50
30
ton
10
tr
5
-0.01
-0.03
-0.1
-0.3
-1
Drain current ID (A)
P_D – Ta
350
Mounted on FR4 board
300
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu pad: 0.32 mm2 ´ 6)
250
Figure 1
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2002-01-24