SSM6J07FU Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon P Channel MOS Type

-2
-1.5
-1
-0.5
0
0
I_D – V_DS
Common Source
-10
-4
Ta = 25°C
-3.3
-3.0
-2.8
-2.6
VGS = -2.4 V
-0.5
-1
-1.5
-2
Drain-Source voltage VDS (V)
SSM6J07FU
-3000
-1000 ^{Common Source}
VDS = -5 V
-100
-10
I_D – V_GS
Ta = 100°C
25°C
-25°C
-1
-0.1
-0.01
0
-0.5 -1 -1.5 -2 -2.5 -3 -3.5
Gate-Source voltage VGS (V)
1600
1400
1200
1000
800
600
400
200
0
0
R_{DS (ON)} – I_D
Common Source
Ta = 25°C
VGS = -3.3 V
-4 V
-10 V
-0.5
-1
-1.5
-2
Drain current ID (A)
1600
1400
1200
R_{DS (ON)} – Ta
Common Source
ID = -0.4 A
1000
800
600
400
VGS = -3.3 V
-4 V
-10 V
200
0
-25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
10
Common Source
VDS = -5 V
3 ^{Ta = 25°C}
|Y_fs| – I_D
1
0.3
0.1
0.03
0.01
-0.01 -0.03 -0.1 -0.3
-1
-3
-10
Drain current ID (A)
-2
Common Source
I_DR – V_DS
VGS = 0
Ta = 25°C
-1.5
G
D
I_DR
S
-1
-0.5
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Drain-Source voltage VDS (V)
3
2002-01-24