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SSM3K302T Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Power Management Switch Applications | |||
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|Yfs| â ID
10
3
1
0.3
0.1
0.01
Common Source
VDS = 3 V
Ta = 25°C
0.1
1
10
Drain current ID (A)
1000
500
300
C â VDS
Ciss
100
50
Common Source
30
Ta = 25°C
f = 1 MHz
VGS = 0 V
Coss
Crss
10
0.1
1
10
100
Drainâsource voltage VDS (V)
SSM3K302T
IDR â VDS
10
Common Source
D
VGS = 0 V
Ta = 25°C
1
IDR
G
S
0.1
Ta =100 °C
0.01
25 °C
0.001
0
â0.2
â25 °C
â0.4
â0.6
â0.8
â1.0
Drainâsource voltage VDS (V)
1000
toff
100
tf
t â ID
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25°C
RG = 4.7 Ω
10
ton
tr
1
0.01
0.1
1
10
Drain current ID (A)
Dynamic Input Characteristic
10
Common Source
ID = 3 A
8
Ta = 25°C
6
VDD=15V
VDD=24V
4
2
0
0
4
8
12
Total Gate Charge Qg (nC)
4
2007-11-01
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