SSM3K302T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM3K302T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K302T
Power Management Switch Applications
High Speed Switching Applications
•
• 1.8 V drive
• Low ON-resistance: R_on = 131 mΩ (max) (@V_GS = 1.8V)
R_on = 87mΩ (max) (@V_GS = 2.5V)
R_on = 71 mΩ (max) (@V_GS = 4.0V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DS
30
V
Gate–source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
3.0
A
6.0
Drain power dissipation
P_{D (Note 1)}
700
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3S1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 10 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note2: Pulse test
Symbol
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_on
t_off
V_DSF
Test Condition
I_D = 1 mA, V_GS = 0
I_D = 1 mA, V_GS = –12 V
V_DS = 30 V, V_GS = 0
V_GS = ± 12 V, V_DS = 0
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 2 A
I_D = 2.0 A, V_GS = 4.0 V
I_D = 1.0 A, V_GS = 2.5 V
I_D = 0.5 A, V_GS = 1.8 V
(Note2)
(Note2)
(Note2)
(Note2)
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 15 V, I_DS= 3.0 A
V_GS = 4 V
V_DD = 10 V, I_D = 2 A,
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
I_D = − 3.0 A, V_GS = 0 V
(Note2)
Min Typ. Max
30
⎯
⎯
18
⎯
⎯
⎯
⎯
1
⎯
⎯
±1
0.4
⎯
1.0
3.8
7.7
⎯
⎯
52
71
⎯
64
87
⎯
81
131
⎯
270
⎯
⎯
56
⎯
⎯
47
⎯
⎯
4.3
⎯
⎯
2.8
⎯
⎯
1.5
⎯
⎯
20
⎯
⎯
31
⎯
⎯ – 0.85 – 1.2
Unit
V
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1
2007-11-01