SSM3K16FS Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

500
300 Common source
VDS = 3 V
Ta = 25°C
100
50
30
⎪Y_fs⎪ – I_D
10
5
3
1
1
10
100
Drain current I_D (mA)
1000
SSM3K16FS
I_DR – V_DS
250
Common source
VGS = 0 V
200 ^{Ta = 25°C}
D
150
G
100
IDR
S
50
0
0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
Drain-Source voltage V_DS (V)
C – V_DS
100
50
10
5
Common source
1 VGS = 0 V
f = 1 MHz
Ta = 25°C
0.3
0.1
0.5 1
Ciss
Coss
Crss
5 10
50 100
Drain-Source voltage V_DS (V)
5000
3000
toff
1000
500
tf
300
t – I_D
Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
100
ton
50
30
tr
10
0.1
1
10
100
Drain current I_D (mA)
P_D – Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2007-11-01