SSM3K16FS Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = ±10 V, V_DS = 0
I_D = 0.1 mA, V_GS = 0
V_DS = 20 V, V_GS = 0
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA, V_GS = 4 V
I_D = 10 mA, V_GS = 2.5 V
I_D = 1 mA, V_GS = 1.5 V
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DD = 3 V, I_D = 10 mA,
V_GS = 0~2.5 V
Switching Time Test Circuit
SSM3K16FS
Min Typ. Max Unit
⎯
⎯
±1
μA
20
⎯
⎯
V
⎯
⎯
1
μA
0.6
⎯
1.1
V
40
⎯
⎯
mS
⎯
1.5
3.0
⎯
2.2 4.0
Ω
⎯
5.2
15
⎯
9.3
⎯
pF
⎯
4.5
⎯
pF
⎯
9.8
⎯
pF
⎯
70
⎯
ns
⎯ 125 ⎯
(a) Test circuit
2.5 V
IN
0
10 μs
V_DD = 3 V
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common Source
Ta = 25°C
OUT
R_L
V_DD
(b) V_IN
2.5 V
(c) V_OUT
0V
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when low operating current value is I_D = 100 μA for this
product. For normal switching operation, V_{GS (on)} requires higher voltage than V_th and V_{GS (off)} requires lower
voltage than V_th. (Relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)} )
Please take this into consideration for using the device.
2
2007-11-01