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SSM3K119TU Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Power Management Switch Applications | |||
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|Yfs| â ID
10
3
1
0.3
0.1
0.01
Common Source
VDS = 3 V
Ta = 25°C
0.1
1
10
Drain current ID (A)
1000
500
300
C â VDS
Ciss
100
50
Common Source
30
Ta = 25°C
f = 1 MHz
VGS = 0 V
Coss
Crss
10
0.1
1
10
100
Drainâsource voltage VDS (V)
1000
800
PD â Ta
a: Mounted on an FR4 board
P â T b: M(2o5u.n4texd2o5n.4axc1e.r6ammimc bDoCarudPada: 645 mm2)
(25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm2)
b
600
a
400
200
0
â40 â20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
SSM3K119TU
IDR â VDS
10
Common Source
D
VGS = 0 V
Ta = 25°C
1
IDR
G
S
0.1
Ta =100 °C
0.01
25 °C
0.001
0
â0.2
â25 °C
â0.4
â0.6
â0.8
â1.0
Drainâsource voltage VDS (V)
1000
toff
100
tf
t â ID
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25°C
RG = 4.7 Ω
10
ton
tr
1
0.01
0.1
1
10
Drain current ID (A)
t â Rth
600
c
100
b
a
10
a: Mounted on a ceramic board
(25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm2)
b: Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm2)
c: Mounted on an FR4 board
1
(25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm2 x 3)
0.001 0.01
0.1
1
10
100 600
Pulse Width tw (s)
4
2007-11-01
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