SSM3K119TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Power Management Switch Applications

SSM3K119TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K119TU
Power Management Switch Applications
High Speed Switching Applications
•
• 1.8 V drive
• Low ON-resistance: R_on = 134 mΩ (max) (@V_GS = 1.8V)
R_on = 90 mΩ (max) (@V_GS = 2.5V)
R_on = 74 mΩ (max) (@V_GS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
30
V
V_GSS
± 12
V
I_D
2.5
A
I_DP
5.0
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm² )
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
⎯
⎯
V
V _{(BR) DSX} I_D = 1 mA, V_GS = –12 V
18
⎯
⎯
V
I_DSS
V_DS = 30 V, V_GS = 0
⎯
⎯
1
μA
I_GSS
V_GS = ± 12 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = 3 V, I_D = 1 mA
0.4
⎯
1.0
V
⏐Y_fs⏐
V_DS = 3 V, I_D = 2 A
(Note3) 3.8
7.7
⎯
S
R_{DS (ON)}
I_D = 2.0 A, V_GS = 4.0 V
I_D = 1.0 A, V_GS = 2.5 V
I_D = 0.5 A, V_GS = 1.8 V
(Note3)
⎯
(Note3)
⎯
(Note3)
⎯
55
74
67
90
mΩ
84
134
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
270
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
56
⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
47
⎯
pF
t_on
t_off
V_DSF
V_DD = 10 V, I_D = 2 A,
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
20
⎯
ns
⎯
31
⎯
I_D = − 2.5 A, V_GS = 0 V
(Note3) ⎯ – 0.85 – 1.2
V
1
2007-11-01