SSM3J16FU Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

1000
500
300
100
50
30
10
5
3
1
-1
⎪Y_fs⎪ – I_D
Common Source
VDS =−3 V
Ta = 25°C
-10
-100
Drain current I_D (mA)
-1000
SSM3J16FU
I_DR – V_DS
-250
Common Source
VGS = 0 V
-200
Ta = 25°C
D
-150 ^G
IDR
S
-100
-50
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Drain - Source V_DS (V)
c – V_DS
200
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
10
Ciss
Coss
Crss
1
-0.1
-1
-10
-100
Drain – Source voltage VDS (V)
10000
5000
3000
toff
1000
500
tf
300
ton
100
50
tr
30
t – I_D
Common Source
VDD = -3 V
VGS = 0~-2.5 V
Ta = 25°C
10
-0.1
-1
-10
-100
Drain current I_D (mA)
250
Mounted on FR4 board
(25.4mmX25.4mmX1.6t
200
CU Pad:0.6mm2X3
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2007-11-01