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SSM3J16FU Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
âªYfsâª
RDS (ON)
Ciss
Crss
Coss
ton
toff
VGS = ±10 V, VDS = 0
ID = â0.1 mA, VGS = 0
VDS = â20 V, VGS = 0
VDS = â3 V, ID = â0.1 mA
VDS = â3 V, ID = â10 mA
ID = â10 mA, VGS = â4 V
ID = â10 mA, VGS = â2.5 V
ID = â1 mA, VGS = â1.5 V
VDS = â3 V, VGS = 0, f = 1 MHz
VDD = â3 V, ID = â 10 mA,
VGS = 0 ~ â2.5 V
SSM3J16FU
MIN.
â¯
â20
â¯
â0.6
25
â¯
â¯
â¯
â¯
â¯
â¯
â¯
â¯
TYP.
â¯
â¯
â¯
â¯
â¯
6
8
18
11
3.7
10
130
190
MAX.
±1
â¯
â1
â1.1
â¯
8
12
45
â¯
â¯
â¯
â¯
â¯
UNIT
μA
V
μA
V
mS
Ω
pF
pF
pF
ns
Switching Time Test Circuit
(a) Test circuit
OUT
0
IN
â2.5V
10 μs
VDD = â3 V
Duty <= 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
RL
VDD
(b) VIN
0V
(c) VOUT
â2.5 V
VDS (ON)
VDD
10%
90%
90%
10%
tr
tf
ton
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
2
2007-11-01
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