SSM3J14T_07 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Power Management Switch DC-DC Converters

−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
−25
V_th – Ta
Common source
VDS = −5 V
ID = −0.1 mA
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
SSM3J14T
700
600
500
400
300
200
100
0
0
C – V_DS
Common source
VGS = 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
−5 −10 −15 −20 −25 −30 −35
Drain-source voltage VDS (V)
1000
300
100
30
10
3
−0.01
t – I_D
Common source
VDD = −15 V
VGS = 0∼−4 V
Ta = 25°C
RG = 10 Ω
tf
toff
ton
tr
−0.1
−1
−10
Drain current ID (A)
−3
Common source
I_DR – V_DS
VGS = 0
D
Ta = 25°C
G
−2
S
−1
0
0
0.2
0.4
0.6
0.8
1
Drain-source voltage VDS (V)
Dynamic input characteristic
−10
Common source
ID = −2.7 A
−8 _{Ta = 25°C}
−12 V
−6
VDD = −24 V
−4
−2
0
0
2
4
6
8
10
12
Total gate charge Q_g (nC)
1.5
t = 10 s
1
DC
0.5
P_D – Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 645 mm²)
0
0
50
100
150
200
Ambient temperature Ta (°C)
4
2007-11-01