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SSM3J14T_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch DC-DC Converters
SSM3J14T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J14T
Power Management Switch
DC-DC Converters
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on Resistance: Ron = 145 mΩ (max) (@VGS = −4.5 V)
: Ron = 85 mΩ (max) (@VGS = −10 V)
• High-speed switching
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDS
−30
V
VGSS
±20
V
ID
−2.7
IDP
A
−5.4
(Note 2)
PD t = 10 s
1.25
W
(Note 1)
0.7
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-3S1A
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 10 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by maximum channel temperature.
Marking
3
Equivalent Circuit
3
KDL
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account
1
2007-11-01