SSM3J112TU Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

|Y_fs| – I_D
3
1
0.3
0.1
0.01
0.03
0.001
−1
Common Source
VDS = −5 V
Ta = 25°C
−10
−100
−1000
Drain current I_D (mA)
−10000
SSM3J112TU
C – V_DS
500
300
100
Ciss
50
30
Coss
10
Crss
5 _{Common Source}
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
−0.1
−1
−10
−100
Drain-Source voltage VDS (V)
Dynamic input characteristic
−10
Common Source
ID = −1 A
Ta = 25°C
−8
−12 V
−6
VDD = −24 V
−4
−2
0
0
1
2
3
Total gate charge Qg (nC)
t – I_D
300
Common Source
VDD = −15 V
VGS = 0∼ −4 V
100
Ta = 25°C
RG = 10 Ω
toff
30
tf
10 ton
tr
3
−0.01
−0.03
−0.1
−0.3
−1
−3
Drain current ID (A)
−2
Common Source
I_DR – V_DS
VGS = 0
−1.6 Ta = 25°C
D
G
I_DR
−1.2
S
−0.8
−0.4
0
0
0.2
0.4
0.6
0.8
1
Drain-Source voltage VDS (V)
1000
800
b
600
a
400
PD - Ta
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta(°C)
4
2007-11-01