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SSM3J112TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications | |||
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SSM3J112TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J112TU
High Speed Switching Applications
⢠4V drive
⢠Low on-resistance: Ron = 790m⦠(max) (@VGS = â4 V)
Ron = 390m⦠(max) (@VGS = â10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDS
â30
V
VGSS
± 20
V
ID
â1.1
A
IDP
â2.2
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm à 25.4 mm à 0.8 mm, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
â
JEITA
â
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Symbol
Test Conditions
Min Typ. Max Unit
V (BR) DSS
V (BR) DSX
ID = â1 mA, VGS = 0
ID = â1 mA, VGS = +20 V
â30
â¯
â¯
V
â15
â¯
â¯
IDSS
VDS = â30 V, VGS = 0
â¯
â¯
â1
μA
IGSS
VGS = ±16V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = â5 V, ID = â0.1 mA
â0.8
â¯
â1.8
V
âYfsâ
VDS = â5 V, ID =â 0.5 A
(Note3) 0.5
1.0
â¯
S
RDS (ON)
ID = â0.5 A, VGS = â10 V
ID = â0.5 A, VGS = â4 V
(Note3)
â¯
310 390
mΩ
(Note3)
â¯
610 790
Ciss
VDS = â15 V, VGS = 0, f = 1 MHz
â¯
86
â¯
pF
Coss
VDS = â15 V, VGS = 0, f = 1 MHz
â¯
25
â¯
pF
Crss
VDS = â15 V, VGS = 0, f = 1 MHz
â¯
14
â¯
pF
ton
VDD = â15 V, ID = â0.5 A,
toff
VGS = 0~â4 V, RG = 10 Ω
â¯
14
â¯
ns
â¯
8.5
â¯
VDSF
ID = 1.1A, VGS = 0 V
(Note3)
â¯
0.85 1.2
V
Note3: Pulse test
1
2007-11-01
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