GT8G132_06 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Strobe Flash Applications

5
Common emitter
Tc = −40°C
4
V_CE – V_GE
IC = 150 A
3
90
2
1
120
60
0
0
1
2
3
4
5
Gate-emitter voltage VGE (V)
GT8G132
5
Common emitter
Tc = 25°C
4
3
90
V_CE – V_GE
IC = 150 A
120
2
60
1
0
0
1
2
3
4
5
Gate-emitter voltage VGE (V)
5
Common emitter
Tc = 70°C
4
V_CE – V_GE
IC = 150 A
3
120
90
2
60
1
0
0
1
2
3
4
5
Gate-emitter voltage VGE (V)
5
Common emitter
Tc = 125°C
4
V_CE – V_GE
IC = 150 A
120
3
90
2
60
1
0
0
1
2
3
4
5
Gate-emitter voltage VGE (V)
V_{GE (OFF)} – Tc
1.4
Common emitter
1.2
VCE = 5 V
IC = 1 mA
1
0.8
0.6
0.4
0.2
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
10000
1000
C – V_CE
Cies
100
10
1
Coes
Cres
Common emitter
VGE = 0 V
f = 1 MHz
Tc = 25°C
10
100
1000
Collector-emitter voltage VCE (V)
4
2006-11-02