GT8G132_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Strobe Flash Applications

GT8G132
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G132
Strobe Flash Applications
Unit: mm
• Supplied in compact and thin package requires only a small
mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: V_GE = 4.0 V (min) (@I_C = 150 A)
• Peak collector current: I_C = 150 A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
400
V
DC
V_GES
±6
Gate-emitter voltage
V
Pulse
V_GES
±8
Collector current
DC
I_C
1 ms
I_CP
8
A
150
Collector power dissipation (Note 1)
P_C
1.1
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note 1: Drive operation: Mount on glass epoxy board [1 inch² × 1.5 t]
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-6J1C
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
1234
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/μs.
1
2006-11-02