GT40T301_06 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications

V_CE, V_GE – Q_G
Common
emitter
30
RL = 7.5 Ω
Tc = 25°C
20
200 ³⁰⁰
10
VCE = 100 V
0
0
40
80 120 160 200 240 280
Gate charge Q_G (nC)
Switching time – I_C
10
Common emitter
5 VCC = 600 V
3 ^{RG = 51 Ω}
VGG = ±15 V
Tc = 25°C
1
toff
0.5
ton
0.3
tr
tf
0.1
0.05
0.03
0.01
0
10
20
30
40
50
Collector current I_C (A)
GT40T301
Switching time – R_G
10
Common emitter
5
VCC = 600 V
IC = 40 A
3 ^{VGG = ±15 V}
Tc = 25°C
1
toff
ton
tr
0.5
tf
0.3
0.1
1
3 5 10
30 50 100
300 500 1000
Gate
resistance R_G (Ω)
10000
5000
3000
C – V_CE
1000
500
300
100
50
30
10 ^{Common emitter}
5 ^{VGE = 0 V}
3 ^{f = 1 MHz}
Tc = 25°C
1
1
35
10
Cies
Coes
Cres
30 50 100
Collector-emitter voltage V_CE (V)
Safe operating area
300
100 ^{IC max (pulsed)*}
10 ms*
1 ms*
50
30
IC max
(continuous)
10
5
DC operation
3 *: Single nonrepetitive
pulse
Tc = 25°C
1 _{Curves must be derated}
0.5 ^{linearly with increase in}
temperature.
0.3
1
3
10 30
10 μs*
100 μs*
100 300 1000 3000
Collector-emitter voltage V_CE (V)
Reverse bias SOA
200
100
30
10
Tj ^<= 125°C
VGE = ±15 V
RG = 51 Ω
3
10
30
100
300
1000
Collector-emitter voltage V_CE (V)
3000
4
2006-11-01