GT40T301_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications

GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : t_f = 0.25 μs (typ.) (I_C = 40 A)
FRD : t_rr = 0.7 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: V_{CE (sat)} = 3.7 V (typ.) (I_C = 40 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector forward
current
DC
1 ms
Collector power dissipation (Tc =
25°C)
Junction temperature
Storage temperature range
V_CES
V_GES
I_C
I_CP
I_ECF
I_ECPF
P_C
T_j
T_stg
1500
V
±25
V
40
A
80
30
A
80
200
W
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT40T301
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01