CRY62_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Zener Diode Silicon Epitaxial Type

160
140
120
100
80
60
40
20
0
0
Ta max – P
Device mounted on a glass-epoxy
board
Soldering land: 6 mm × 6 mm
0.2
0.4
0.6
0.8
1.0
Power dissipation P (W)
α_{T –} V_Z
25
CRY62~CRZ27
20
(typ.)
15
10
5
0
0
4
8
12
16
20
24
28
Zenner voltage V_Z (V)
CRY62~CRZ47
1000
500
300
100
50
30
P_RSM – t_W
PRSM
Recommended
tW
Rectangular pulse
Ta = 25°C
10
5
3
0.01 0.03
0.1
0.3
1
3
10
Pulse width t_W (ms)
40
CRZ30~CRZ47
α_{T –} V_Z
35
(typ.)
30
25
26
30
34
38
42
46
50
Zenner voltage V_Z (V)
r_{th (j-a)} – t
10000
(1) Device mounted on a ceramic board
Soldering land: 2 mm × 2 mm
(2) Device mounted on a glass-epoxy board
1000
Soldering land: 6 mm × 6 mm
100
(2)
(1)
10
1
0.001
0.01
0.1
1
10
100
Time t (s)
4
削除: n
2006-11-09