CRY62_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Zener Diode Silicon Epitaxial Type

TOSHIBA Zener Diode Silicon Epitaxial Type
CRY62~CRZ47
Applications:
Communication, Control and
Measurement Equipment
Constant Voltage Regulation
Transient Suppressors
CRY62~CRZ47
Unit: mm
z Average power dissipation: P = 0.7 W
z Zener voltage: VZ = 6.2~47 V
z Suitable for compact assembly due to small surface-mount package
“S−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
700
mW
Junction temperature
Storage temperature range
T_j
−40 ~ 150
°C
JEDEC
―
T_stg
−40 ~ 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Standard Soldering Pad
1.2
1.2
2.8
Unit: mm
削除: Use in
削除: Automation
1
2006-11-09