CRS10I30B Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

10
Pulse test
i_F – v_F
3
Tj = 150°C
1 ^125°C
75°C
0.3
0.1
25°C
0.03
0.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous forward voltage vF (V)
Ta max – I_{F (AV)}
Ceramic substrate (substrate size:
50 mm × 50 mm, soldering land: 2 mm × 2 mm)
160
140
120
100
80
α = 60° 120° 180°
DC
60 _{Rectangular waveform}
40
0° α 360°
20
I_{F (AV)}
Conduction angle α
0
V_R = 15 V
0.0 0.2 0.4 0.6 0.8
1.0 1.2
1.4 1.6
Average forward current IF _(AV) (A)
CRS10I30B
P_{F (AV)} – I_{F (AV)}
0.6
DC
0.5
180°
0.4
120°
0.3
α = 60°
0.2
Rectangular
waveform
0.1
0° α 360°
Conduction angle α
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average forward current IF _(AV) (A)
Ta max – I_{F (AV)}
Glass-epoxy substrate (substrate size:
50 mm × 50 mm, soldering land: 6 mm × 6 mm)
160
Rectangular waveform
140
0° α 360°
120
I_{F (AV)}
Conduction angle α
V_R = 15 V
100
80
60
40
α = 60°
120° 180°
DC
20
0
0.0 0.2 0.4
0.6 0.8 1.0 1.2
1.4 1.6
Average forward current IF _(AV) (A)
Tℓ max – I_{F (AV)}
160
140
120
100
80
α = 60° 120° 180°
DC
60
Rectangular waveform
40
0° α 360°
20
I_{F (AV)}
Conduction angle α
0
V_R = 15 V
0.0 0.2 0.4 0.6 0.8
1.0 1.2
1.4 1.6
Average forward current IF _(AV) (A)
1000
500
300
r_{th (j-a)} – t
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
100
50
30
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
10
Soldering land: 2.0 mm × 2.0 mm
board thickness: 0.64 mm
5
3
1
0.001
0.01
0.1
1
10
Time t (s)
100
1000
4
2013-11-01