CRS10I30B Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

Electrical Characteristics (Ta = 25°C)
CRS10I30B
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
V_{FM (1)} I_FM = 0.1 A (pulse test)
⎯ 0.27 ⎯
Peak forward voltage
V_{FM (2)} I_FM = 0.7 A (pulse test)
⎯ 0.35 ⎯
V
V_{FM (3)} I_FM = 1.0 A (pulse test)
⎯ 0.37 0.42
Repetitive peak reverse current
I_{RRM (1)} V_RRM = 5.0 V (pulse test)
I_{RRM (2)} V_RRM = 30 V (pulse test)
⎯
10
⎯
μA
⎯
20
60
Junction capacitance
C_j V_R = 10 V, f = 1.0 MHz
⎯
50
⎯
pF
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
⎯
(board thickness: 0.64 mm)
Thermal resistance (junction to ambient) R_{th (j-a) Device mounted on a glass-epoxy board}
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
⎯
(board thickness: 1.6 mm)
⎯
70
°C/W
⎯
140
Thermal resistance (junction to lead)
R_{th (j-ℓ)}
⎯
⎯
⎯
20 °C/W
Marking
Abbreviation Code
SH
Part No.
CRS10I30B
Cathode dot
Cathode
Land pattern dimensions for reference only
1.2
1.2
2.8
Unit: mm
Part No.(or abbreviation code)
SH
Anode
ﾞ
Cathode mark and Lot code
2
2013-11-01