CMC02 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – For Strobe Discharge Circuit

100
Pulse test
i_F – v_F
10
150°C
1
75°C
Tj = 25°C
0.1
0.01
0
0.4
0.8
1.2
1.6
2.0
Instantaneous forward voltage v_F (V)
Ta max – I_{F (AV)}
Device mounted on a glass-epoxy board
(board size:50 mm x 50 mm, soldering land 6 mm x 6 mm)
160
Halfsine waveform
140
120
0°
180°
Conduction angle 180°
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Average forward current I_{F (AV)} (A)
Surge forward current (non-repetitive)
40
Ta = 25°C
f = 50 Hz
30
20
10
0
1
10
100
Number of cycles
CMC02
P_{F (AV)} – I_{F (AV)}
1.2
Halfsine waveform
1.0
0°
180°
0.8 ^{Conduction angle 180°}
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Average forward current I_{F (AV)} (A)
Ta max – I_{F (AV)}
Device mounted on a ceramic board
(board size: 50 mm x 50 mm, soldering land 2 mm x 2 mm)
160
140
120
100
80
60
Halfsine waveform
40
20
0°
180°
Conduction angle 180°
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Average forward current I_{F (AV)} (A)
r_{th (j-a)} – t
1000
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm,
soldering land: 2.1 mm × 1.4 mm,
board thickness: 1.6 t
100
10
1
0.1
0.001
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm,
soldering land: 6.0 mm × 6.0 mm,
board thickness: 1.6 t
Device mounted on a ceramic board:
board size: 50 mm × 50 mm,
soldering land: 2.0 mm × 2.0 mm,
board thickness: 0.64 t
0.01
0.1
1
10
100 1000
Time t (s)
4
2006-11-06