CMC01_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – SILICON DIFFUSED TYPE For Strobe Discharge Circuit

100
Pulse test
i_F – v_F
Tj = 150°C
10
75°C
25°C
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous forward voltage vF (V)
CMC01
P_{F (AV)} – I_{F (AV)}
1.2
Halfsine waveform
1.0
0°
180°
0.8 _{Conduction angle 180°}
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Average forward current IF _(AV) (A)
Ta max – I_{F (AV)}
160
Device mounted on a glass-epoxy board
140
Soldering land: 6 mm × 6 mm
120
Device mounted on a glass-epoxy board
Soldering land: 2.1 mm × 1.4 mm
100
80
60 _{Halfsine waveform}
40
20
0° 180°
Conduction angle 180°
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Average forward current I_{F (AV)} (A)
Surge forward current (non-repetitive)
50
Ta=25°C
f=50Hz
40
30
20
10
0
1
10
100
Number of cycles
r_{th (j-a)} – t
1000
Device mounted on a glass-epoxy board
Soldering land: 2.1 mm × 1.4 mm
100
10
Device mounted on a glass-epoxy board
Soldering land: 6 mm × 6 mm
1
Device mounted on a ceramic board
Soldering land: 2 mm × 2 mm
0.1
0.001 0.01
0.1
1
10
100 1000
Time t (s)
4
2006-11-06