2SK3561 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)

R_{DS (ON)} – Tc
2.0
COMMON SOURCE
VGS = 10 V
1.6 PULSE TEST
1.2
ID = 8 A
4
0.8
2
0.4
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3561
I_DR – V_DS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
5
3
1
VGS = 0, −1 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
DRAIN-SOURCE VOLTAGE V_DS (V)
10000
CAPACITANCE – V_DS
1000
100
Ciss
Coss
10 ^{COMMON SOURCE}
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V_DS (V)
V_th – Tc
5
4
3
2
COMMON SOURCE
1
VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P_D – Tc
60
40
20
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
300
200
100
0
0
VDS
16
VDD = 100 V
400
12
200
8
VGS
COMMON SOURCE
ID = 8 A
4
Tc = 25°C
PULSE TEST
0
10
20
30
40
50
TOTAL GATE CHARGE Q_g (nC)
4
2005-01-26