2SK3561 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)

2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
500
V
500
V
±30
V
8
A
32
40
W
312
mJ
8
A
4
mJ
150
°C
-55~150
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
R_{th (ch-c)}
3.125
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V_DD = 90 V, T_ch = 25°C(initial), L = 8.3 mH, I_AR = 8 A, R_G = 25 Ω
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2005-01-26