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2SC5819_04 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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2SC5819
rth â tw
1000
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
0.1
1
10
100
1000
Pulse width tw (s)
Safe Operating Area
10
IC max (pulsed) ⦠10 ms⦠1 ms⦠100 µsâ¦
IC max (continuous) 100 msâ¦*
1
10 sâ¦*
DC operation *
(Ta = 25°C)
â¦: Single nonrepetitive pulse
Ta = 25°C
0.1 Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices arenât
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
1
10
100
Collector-emitter voltage VCE (V)
4
2004-07-07
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