2SC5819_04 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

I_C – V_CE
1.5
20 15
10
8
6
4
1
IB = 2 mA
0.5
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0
0
0.2
0.4
0.6
0.8
Collector-emitter voltage V_CE (V)
2SC5819
h_FE – I_C
10000
Common emitter
VCE = 2 V
Single nonrepetitive pulse
1000
Ta = 100°C
25
−55
100
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{CE (sat)} – I_C
1
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0.1
Ta = 100°C
−55
25
0.01
0.001
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 50
Single nonrepetitive
pulse
25 ^−55
1
Ta = 100°C
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
1.5
Common emitter
VCE = 2 V
Single nonrepetitive
1.2 _pulse
I_C – V_BE
0.9
0.6
Ta = 100°C
−55
0.3
25
0
0
0.3
0.6
0.9
1.2
1.5
Base-emitter voltage V_BE (V)
3
2004-07-07