2SC5819 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

2SC5819
r_th – t_w
1000
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm²)
0.1
1
10
100
1000
Pulse width t_w (s)
Safe Operating Area
10
IC max (pulsed) ¨ 10 ms¨ 1 ms¨ 100 ms¨
IC max (continuous) 100 ms¨*
1
10 s¨*
DC operation *
(Ta = 25°C)
¨: Single nonrepetitive pulse
0.1
Ta = 25°C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm²). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
1
10
100
Collector-emitter voltage V_CE (V)
4
2001-12-17