2SC5819 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

2SC5819
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5819
High-Speed Switching Applications
DC-DC Converter Applications
Industrial Applications
Unit: mm
· High DC current gain: hFE = 400 to 1000 (IC = 0.15 A)
· Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
· High-speed switching: tf = 45 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
t = 10 s
DC
Junction temperature
Storage temperature range
V_CBO
40
V
V_CEX
30
V
V_CEO
20
V
V_EBO
7
V
I_C
1.5
A
I_CP
2.5
I_B
150
mA
P_C
2.0
W
(Note 1)
1.0
T_j
150
°C
T_stg
-55 to 150
°C
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = 40 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.15 A
V_CE = 2 V, I_C = 0.5 A
I_C = 0.5 A, I_B = 10 mA
I_C = 0.5 A, I_B = 10 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
See Figure 1 circuit diagram.
V_CC ~- 12 V, R_L = 24 W
I_B1 = -I_B2 = 17 mA
Min Typ. Max Unit
¾
¾
100
nA
¾
¾
100
nA
20
¾
¾
V
400
¾ 1000
200
¾
¾
¾
¾
0.12
V
¾
¾
1.10
V
¾
18
¾
pF
¾
43
¾
¾
295
¾
ns
¾
45
¾
1
2001-12-17