2SC5713_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type High-Speed Switching Applications

2SC5713
Transient Thermal Resistance r_th – t_w
1000
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm²)
0.1
1
10
100
1000
Pulse width t_w (s)
Safe Operating Area
10 _{IC max (pulsed) ♦}
IC max (continuous)
1
100 μs♦
1 ms♦
10 ms♦
100 ms♦*
10 s♦*
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for
0.1 100 ms*, 10 s* and DC
operation* will be different when
the devices aren’t mounted on
an FR4 board (glass epoxy,
1.6 mm thick, Cu area:
645 mm²). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
1
10
100
Collector-emitter voltage V_CE (V)
4
2006-11-10