2SC5713_06 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type High-Speed Switching Applications

I_C – V_CE
6
Common emitter
Ta = 25°C
Single nonrepetitive pulse
5
25
20
15
4
10
3
8
6
2
4
1
IB = 2 mA
0
0
0.4
0.8
1.2
1.6
2
2.4
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
1
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0.1
Ta = 100°C
−55°C
25°C
0.01
0.001
0.001
0.01
0.1
1
10
Collector current I_C (A)
2SC5713
10000
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
h_FE – I_C
1000
Ta = 100°C
25°C
−55°C
100
10
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10 _{Common emitter}
IC/IB = 50
Single nonrepetitive
pulse
1
Ta = −55°C
25°C
100°C
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
I_C – V_BE
5
Common emitter
VCE = 2 V
Single nonrepetitive pulse
4
3
Ta = 100°C
2
1
−55°C
25°C
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
3
2006-11-10