2SC5703 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5703
r_th – t_w
1000
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
0.1
1
10
100
1000
Pulse width t_w (s)
Safe Operating Area
10 _{IC max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 µs♦ 10 µs♦}
IC max (continuous)
100 ms♦*
1
10 s♦*
DC operation*
(Ta = 25°C)
♦: Single nonrepetitive pulse
0.1
Ta = 25°C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm²). These characteristic
curves must be derated linearly
0.01 ^{with increase in temperature.}
0.1
1
10
100
Collector-emitter voltage V_CE (V)
4
2001-12-17