2SC5703 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type

I_C – V_CE
5 _{Common emitter}
60
Ta = 25°C
50
Single nonrepetitive
pulse
40
4
30
20
3
10
2
5
2
1
IB = 1 mA
0
0
0.2
0.4
0.6
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
1 _{Common emitter}
IC/IB = 50
Single nonrepetitive pulse
0.1
Ta = 100°C
−55
0.01
25
0.001
0.001
0.01
0.1
1
10
Collector current I_C (A)
2SC5703
10000
1000
100
h_FE – I_C
Ta = 100°C
25
−55
10
Common emitter
VCE = 2 V
Single nonrepetitive pulse
1
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
1
Ta = 100°C
25
−55
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
I_C – V_BE
5
Common emitter
VCE = 2 V
Single nonrepetitive pulse
4
3
2
1
Ta = 100°C
25 −55
0
0
0.4
0.8
1.2
Base-emitter voltage V_BE (V)
3
2001-12-17