2SC5176_04 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Current Switching Applications

V_{BE (sat)} – I_C
30
Common emitter
10
IC/IB = 20
5
3
1
Ta = −55°C
0.5
0.3
100
25
0.1
0.003 0.01 0.03 0.1 0.3
1
3
10
Collector current I_C (A)
2SC5176
5
Common emitter
VCE = 1 V
4
I_C – V_BE
3
2
Ta = 100°C 25 −55
1
0
0
0.2
0.4 0.6
0.8 1.0
1.2 1.4
Base-emitter voltage V_BE (V)
100
50
30
10
5
3
1
0.5
0.3
0.1
0.001
r_th – t_w
Curves should be applied in thermal limited
area. (single nonrepetitive pulse) No heat sink
Ta = 25°C
0.01
0.1
1
10
100 1000
Pulse width t_w (s)
Safe Operating Area
10 IC max (pulsed)*
5 ^{IC max (continuous)}
3
100 µs*
1 ms*
1
DC operation
0.5
Ta = 25°C
0.3
10 ms*
10 µs*
0.1
0.05
0.03
0.01
0.1
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be dated
linearly with increase in
temperature.
1
VCEO max
10
100
Collector-emitter voltage V_CE (V)
P_C – Ta
2.0
1.6
1.2
0.8
0.4
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
4
2004-07-26