2SC5176_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Current Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5176
High-Current Switching Applications
DC-DC Converter Applications
2SC5176
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
• High-speed switching: tstg = 1.0 µs (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
100
V
80
V
7
V
5
A
8
1
A
1.8
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 100 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 1 V, I_C = 1 A
V_CE = 1 V, I_C = 3 A
I_C = 3 A, I_B = 0.15 A
I_C = 3 A, I_B = 0.15 A
V_CE = 4 V, I_C = 1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
1
µA
―
―
1
µA
80
―
―
V
70
― 240
40
―
―
―
0.2 0.4
V
―
0.9 1.2
V
― 120 ― MHz
―
80
―
pF
Turn-on time
Switching time Storage time
Fall time
t_on
Output
―
0.2
―
20 µs Input ^IB1
t_stg
I_B2
V_CC ≈ 30 V
t_f
I_B1 = −I_B2 = 0.15 A, duty cycle ≤ 1%
―
1.0
―
µs
―
0.1
―
1
2004-07-26