2SC3225_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type Switching Applications

V_{BE (sat)} – I_C
5
Common emitter
3
IC/IB = 300
1 _{Ta = −55°C}
0.5
25
100
0.3
0.1
0.01
0.03
0.1
0.3
1
Collector current I_C (mA)
P_C – Ta
1000
800
600
400
200
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
2SC3225
I_C – V_BE
2.0 _{Common emitter}
VCE = 1 V
1.6
1.2
0.8
0.4
Ta = 100°C 25 −55
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage V_BE (V)
Safe Operating Area
5
IC max (pulsed)*
3
IC max (continuous)
10 ms*
1 ms*
1
100 ms*
1 s*
0.5
0.3
DC operation
Ta = 25°C
0.1
*: Single nonrepetitive pulse
0.05
Ta = 25°C
0.03 _{Curves must be derated linearly with}
increase in temperature.
0.01
0.1
0.3
1
3
VCEO max
10
30
Collector-emitter voltage V_CE (V)
4
2006-11-09