2SC3225_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type Switching Applications

2SC3225
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3225
Switching Applications
Solenoid Drive Applications
Industrial Applications
Unit: mm
• High DC current gain: h_FE = 500 (min) (I_C = 400 mA)
• Low collector-emitter saturation voltage: V_{CE (sat)} = 0.5 V (max)
(I_C = 300 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
40
V
Collector-emitter voltage
V_CEO
40
V
Emitter-base voltage
V_EBO
7
V
Collector current
I_C
2
A
Base current
I_B
0.5
A
Collector power dissipation
Junction temperature
Storage temperature range
P_C
900
mW
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TO-92MOD
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09