2SB908_10 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

I_C – V_BE
−5
Common emitter
−4
VCE = −2 V
−3
100
Tc = −55°C
25
−2
−1
0
0
−0.8 −1.6 −2.4 −3.2 −4.0 −4.8
Base-emitter voltage V_BE (V)
20
16 ₍₁₎
12
P_C – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
8
4 ₍₂₎
(3)
0
0
40
80
120
160
200
240
Ambient temperature Ta (°C)
2SB908
Safe Operating Area
−10
IC max (pulsed)*
−5 _{IC max (continuous)}
−3
1 ms*
10 ms*
−1
DC operation
−0.5
Tc = 25°C
−0.3
*: Single nonrepetitive pulse
−0.1
−0.04
−1
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO
max
−3
−10
−30
−100
Collector-emitter voltage V_CE (V)
4
2010-02-05