2SB908_10 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB908
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
2SB908
Unit: mm
• High DC current gain: h_{FE (1)} = 2000 (min) (V_CE = −2 V, I_C = −1 A)
• Low saturation voltage: V_{CE (sat)} = −1.5 V (max) (I_C = −3 A)
• Complementary to 2SD1223
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−100
V
−80
V
−5
V
−4
A
−0.4
A
1.0
W
15
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
≈ 4.5 kΩ
≈ 300 Ω
EMITTER
1
2010-02-05