2SA2056 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2056
r_th – t_w
1000
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
0.1
1
10
100
1000
Pulse width t_w (s)
Safe Operating Area
−10
IC max (pulsed)♦ 10 ms♦ 1 ms♦100 µs♦ 10 µs♦
IC max (continuous)
100 ms♦*
−1 ^{10 s♦*}
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
−0.1
Ta = 25°C
Note that the curves for
100 ms*, 10 s* and DC
operation* will be different when
the devices aren’t mounted on
an FR4 board (glass epoxy, 1.6
mm thick, Cu area: 645 mm²).
These characteristic curves
must be derated linearly with
−0.01 ^{increase in temperature.}
−0.1
−0.5 −1
−5 −10
−50 −100
Collector-emitter voltage V_CE (V)
4
2001-10-29