2SA2056 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type

−3
−100
−2.4
I_C – V_CE
−80 _−60
−40
−30
−20
−1.8
−1.2
−0.6
0
0
−10
−6
−4
IB = −2 mA
Common emitter
Ta = 25°C
Single nonrepetitive
pulse
−0.4
−0.8 −1.2
−1.6
−2
−2.4
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
−1
Common emitter
IC/IB = 30
Single nonrepetitive
pulse
−0.1
−0.01
Ta = 100°C
−55
25
−0.001
−0.001
−0.01
−0.1
−1
−10
Collector current I_C (A)
2SA2056
10000
1000
100
h_FE – I_C
Ta = 100°C
25
−55
10
1
−0.001
−0.01
Common emitter
VCE = −2 V
Single
nonrepetitive
pulse
−0.1
−1
−10
Collector current I_C (A)
V_{BE (sat)} – I_C
−10
Common emitter
IC/IB = 30
Single nonrepetitive pulse
−55 25
−1
Ta = 100°C
−0.1
−0.001
−0.01
−0.1
−1
−10
Collector current I_C (A)
−3.0
Common emitter
I_C – V_BE
VCE = −2 V
−2.4 Single nonrepetitive pulse
−1.8
−1.2
Ta = 100°C
25 _−55
−0.6
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Base-emitter voltage V_BE (V)
3
2001-10-29