2SA1771_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Current Switching Applications

V_{BE (sat)} – I_C
−5
Common emitter
IC/IB = 20
−3
−1
−0.5
−0.3
Tc = −55°C
100
25
−0.1
−0.1
−0.3 −0.5 −1
−3 −5 −10 −20
Collector current I_C (A)
2SA1771
I_C – V_BE
−12
Common emitter
−10
VCE = −1 V
−8
−6 ^{Tc = 100°C}
−4
−2
25
−55
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8
Base-emitter voltage V_BE (V)
r_th – t_w
100
Curves should be applied in thermal limited area.
(Single nonrepetitive pulse)
30
(1) Infinite heat sink
(2) No heat sink
10
3
1
0.3
0.1
0.001
0.01
0.1
1
10
Pulse width t_w (s)
(2)
(1)
100
1000
Safe Operating Area
−30
IC max (pulsed)*
−10 IC max
(continuous)
10 ms*
−5
1 ms*
−3
DC operation
Tc = 25°C
−1
−0.5
*: Single nonrepetitive pulse
−0.3 _{Tc = 25°C}
Curves must be derated linearly
with increase in temperature.
VCEO max
−0.1
−1
−3
−10
−30
−100
Collector-emitter voltage V_CE (V)
40
(1)
30
P_C – Tc
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
20
10
(2)
0
0
40
80
120
160
200
Case temperature Tc (°C)
4
2006-11-09