2SA1771_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Current Switching Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1771
High-Current Switching Applications
2SA1771
Unit: mm
• Low collector saturation voltage: V_{CE (sat)} = −0.4 V (max) (I_C = −6 A)
• High-speed switching: t_stg = 0.6 μs (typ.)
• High emitter-base breakdown voltage: V _{(BR) EBO} = −14 V (min)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−80
V
Collector-emitter voltage
V_CEO
−80
V
Emitter-base voltage
V_EBO
−14
V
Collector current
I_C
−12
A
Base current
I_B
−1.2
A
Collector power dissipation
(Tc = 25°C)
P_C
30
W
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
TOSHIBA
SC-67
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09