TPCA8109 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOSⅥ)

TPCA8109
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±20 V, V_DS = 0 V
⎯
⎯ ±100 nA
I_DSS
V_DS = −30 V, V_GS = 0 V
⎯
⎯
−10
μA
V _{(BR) DSS} I_D = −10 mA, V_GS = 0 V
−30 ⎯
⎯
V
V _{(BR) DSX} I_D = −10 mA, V_GS = 10 V (Note5)
−21
⎯
⎯
V_th
V_DS = −10 V, I_D = − 0.5 mA
−0.8 ⎯
−2.0
V
R_{DS (ON)}
V_GS = −4.5V, I_D = −12 A
V_GS = −10 V, I_D = −12 A
⎯
10
13
mΩ
⎯
7
9
C_iss
⎯ 2400 ⎯
C_rss
V_DS = −10 V, V_GS = 0 V, f = 1 MHz ⎯
400
⎯
pF
C_oss
⎯
460
⎯
t_r
0V
V_GS
−10 V
t_on
I_D = −12 A
⎯
9.2
⎯
V_OUT
⎯
16
⎯
ns
t_f
⎯
58
⎯
V_DD ≈ −15 V
t_off
Duty ≤ 1%, t_w = 10 μs
⎯
172
⎯
Q_g
Q_gs1
Q_gd
V_DD ≈ −24 V, V_GS = −10 V,
I_D = −24 A
⎯
56
⎯
⎯
5.6
⎯
nC
⎯
15
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition
⎯
I_DR = −24 A, V_GS = 0 V
Min Typ. Max Unit
⎯
⎯
−72
A
⎯
⎯
1.2
V
Note 5: V_(BR)DSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum
rating of drain-source voltage.
3
2009-12-03